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| PROFET(R) Data sheet BTS 6143 D Smart Highside Power Switch * Reverse battery protection by self turn on of power MOSFET Reversave Features * Short circuit protection with latch * Current limitation * Overload protection * Thermal shutdown with restart * Overvoltage protection (including load dump) * Loss of ground protection * Loss of Vbb protection (with external diode for charged inductive loads) * Very low standby current * Fast demagnetisation of inductive loads * Electrostatic discharge (ESD) protection * Optimized static electromagnetic compatibility (EMC) Product Summary Operating voltage On-state resistance Nominal current Load current (ISO) Current limitation Package Vbb(on) RON IL(nom) IL(ISO) IL12(SC) 5.5 ... 38 V 10 m 8 A 33 A 75 A TO-252-5-1 (DPAK 5 pin; less than half the size as TO 220 SMD) Diagnostic Function * Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Application * Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads * All types of resistive, inductive and capacitive loads * Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab R Voltage source Overvoltage protection Current limit Gate protection bb + V bb Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection OUT 1, 5 IL Current Sense Load 2 IN ESD Logic I IN Temperature sensor I IS IS PROFET Load GND VIN V IS Logic GND 4 R IS Infineon Technologies AG 1 of 16 2003-Oct-01 Data sheet BTS 6143 D Pin 1 2 Tab/(3) 4 Symbol OUT IN Vbb IS O I + S Function Output; output to the load; pin 1 and 5 must be externally shorted* . Input; activates the power switch if shorted to ground. Supply Voltage; positive power supply voltage; tab and pin3 are internally shorted. Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) Output; output to the load; pin 1 and 5 must be externally shorted* . 5 OUT O *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection 1) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 , RL= 1.5 , td= 400 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation 3) single pulse IL = 20 A, Vbb= 12V Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5k; C=100pF Current through input pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 9 Symbol Vbb Vbb VLoad dump2) IL Tj Tstg Ptot EAS VESD IIN IIS Values 38 30 45 self-limited -40 ...+150 -55 ...+150 59 0.3 3.0 +15, -120 +15, -120 Unit V V V A C W J kV mA Input voltage slew rate Vbb 16V : dVbIN / dt Vbb > 16V 4): self-limited 20 V/s 1) 2) 3) 4) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 See also diagram on page 11. See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also page 10. Infineon Technologies AG 2 of 16 2003-Oct-01 Data sheet BTS 6143 D Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB 6) Values typ max -1.1 80 -45 55 Unit K/W Electrical Characteristics Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) VIN= 0, Vbb= 5.5V, IL = 7.5 A VIN= 0, Vbb= 12V, IL = 7.5 A Tj=25 C: RON Tj=150 C: -----10 18 8 14 30 14 24 10 18 65 m Tj=25 C: Tj=150 C: Output voltage drop limitation at small load currents (Tab to pin 1,5) 5) Tj=-40...150 C: Nominal load current (Tab to pin 1,5) ISO Proposal: VON 0.5 V, TC = 85C, Tj 150C SMD 6), VON 0.5 V, TA = 85C, Tj 150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 2.2 , Tj=-40...150 C Slew rate on 25 to 50% VOUT, RL = 2.2 , Tj=-40...150 C Slew rate off 50 to 25% VOUT, RL = 2.2 , Tj=-40...150 C VON(NL) mV IL(ISO) IL(nom) ton toff dV /dton -dV/dtoff 33 8 ----- 41 10 250 250 0.3 0.3 --500 500 0.5 0.6 A s V/s V/s 5) 6) See figure 7a on page 15. Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG 3 of 16 2003-Oct-01 Data sheet BTS 6143 D Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Operating Parameters Operating voltage (VIN=0) Tj=-40...150 C: Vbb(on) 7) 8) Undervoltage shutdown VbIN(u) Undervoltage restart of charge pump Vbb(ucp) Overvoltage protection 9) Ibb=15 mA Standby current IIN=0 Reverse Battery Reverse battery voltage 10) On-state resistance (pin 1,5 to pin 3) Vbb= - 8V, VIN= 0, IL = -7.5 A, RIS = 1 k, 8) Tj=25 C: RON(rev) Tj=150 C: Vbb= -12V, VIN= 0, IL = -7.5 A, RIS = 1 k, Tj=25 C: Tj=150 C: Integrated resistor in Vbb line Rbb -Vbb VZ,IN Tj=-40...+150C: Tj=-40...+120C: Ibb(off) Tj=150C: 5.5 --63 --- -2.5 4 67 3 6 38 3.5 5.5 -6 14 V V V V A -- -- 16 V ------ 9.5 16 9 15 100 13 22 12 20 150 m Inverse Operation 11) Output voltage drop (pin 1,5 to pin 3) 8) IL = -7.5 A, RIS = 1 k, Tj=25 C: - VON(inv) IL = -7.5 A, RIS = 1 k, Tj=150 C: Turn-on delay after inverse operation; IL > 0A 8) VIN(inv) = VIN(fwd) = 0 V td(inv) ---700 300 1 ---mV ms 7) VbIN=Vbb-VIN see schematic on page 8 and page 14. not subject to production test, specified by design 9) See also VZ(IN) in schematic page 9. 10) For operation at voltages higher then |16V| please see required schematic on page 10. 11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv)) after the transition from inverse to forward mode. 8) Infineon Technologies AG 4 of 16 2003-Oct-01 Data sheet BTS 6143 D Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions 12) Short circuit current limit (Tab to pin 1,5) 13) Short circuit current limit at VON = 6V 14) Tj =-40C: Tj =25C: Tj =+150C: Short circuit current limit at VON = 12V Tj(start) =-40C: tm=170s Tj(start) =25C: Tj(start) =+150C: Short circuit current limit at VON = 18V 14) Tj(start) =-40C: Tj(start) =25C: Tj(start) =+150C: Short circuit current limit at VON = 24V Tj(start) =-40C: tm=170s Tj(start) =25C: Tj(start) =+150C: Short circuit current limit at VON = 30V 14) Tj(start) =-40C: Tj(start) =25C: Tj(start) =+150C: Short circuit shutdown detection voltage (pin 3 to pins 1,5) IL6(SC) IL12(SC) IL18(SC) IL24(SC) IL30(SC) --70 --45 --33 --20 --15 2.5 350 -39 150 -- 110 105 90 80 75 60 60 55 50 40 40 35 25 25 25 3.5 650 2 42 175 10 140 --110 --80 --60 --40 --4.5 1200 ----- A A A A A VON(SC) td(SC1) td(SC2) VON(CL) Tjt V s s V C K Short circuit shutdown delay after input current positive slope, VON > VON(SC), Tj = -40...+150C min. value valid only if input "off-signal" time exceeds 30 s Short circuit shutdown delay during on condition14) VON > VON(SC) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Thermal overload trip temperature Thermal hysteresis 15) Tjt Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) Short circuit current limit for max. duration of t d(SC1) , prior to shutdown, see also figures 3.x on page 13. 14) not subject to production test, specified by design 15) See also figure 2b on page 12. 12) Infineon Technologies AG 5 of 16 2003-Oct-01 Data sheet BTS 6143 D Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS, IIS < IIS,lim 16), VIS VON>1V, typ Tj = -40...+150C: Tj = -40...+150C: kILIS -- 10 000 -- 8300 8300 8300 7500 8000 8200 7100 7700 8000 5000 5500 6000 -IIS,fault IIS,lim 4.0 4.0 350 --50 10000 9700 9300 10000 9700 9300 10000 9700 9300 12000 12000 12000 0 5.2 6.0 650 0.1 0.1 -- 11000 10600 10000 11400 10800 10200 13400 12500 12000 21000 19000 18000 -7.5 7.5 1200 0.5 1 -mA mA s A A mA Sense saturation current VON<1V, typ Fault-Sense signal delay after input current positive tdelay(fault) slope, VON >1V, Tj = -40...+150C Current sense leakage current, IIN = 0 Current sense offset current, VIN = 0, IL 0 Minimum load current for sense functionality, IIS(LL) IIS(LH) IL(MIN) VIN = 0, Tj = -40...+150C Current sense settling time to IIS static after input current positive slope, 18) tson(IS) 20 A, Tj= -40...+150C IL = 0 Current sense settling time during on condition, 18) IL = 10 20 A, Tj= -40...+150C tslc(IS) Overvoltage protection Ibb = 15 mA Tj = -40...+150C: VZ,IS -- 250 500 s s V -63 50 67 100 -- 16) 17) See also figures 4.x and 6.x on page 13 and 14. Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth table on page 8. 18) not subject to production test, specified by design Infineon Technologies AG 6 of 16 2003-Oct-01 Data sheet BTS 6143 D Parameter and Conditions at Tj= 25, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input Required current capability of input switch IIN(on) Tj =-40..+150C: Input current for turn-off Tj =-40..+150C: IIN(off) --- 1.4 -- 2.2 30 mA A Infineon Technologies AG 7 of 16 2003-Oct-01 Data sheet BTS 6143 D Truth Table Input Current level L H L H L H L H L H L H Output level L H L H L L L L H H Z H Current Sense IIS 0 (IIS(LL)) nominal 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) L = "Low" Level H = "High" Level Z = high impedance, potential depends on external circuit Terms I bb VbIN 3 Vbb IL V bb RIN V IN VON OUT 2 IN PROFET IS 1,5 I IN VbIS 4 I IS DS VOUT VIS R IS Two or more devices can easily be connected in parallel to increase load current capability. 19) 20) Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.) . See also page 11. Short Circuit is detected at the following condition: VON > 3.5V (typ.) . See also page 11. 21) Low ohmic short to V may reduce the output current I and therefore also the sense current I . bb L IS Infineon Technologies AG 8 of 16 2003-Oct-01 Data sheet BTS 6143 D Input circuit (ESD protection) V bb Inductive and overvoltage output clamp + Vbb VZ1 V ON V V bIN ZD R bb Z,IN IN I OUT PROFET IN VON is clamped to VON(Cl) = 42 V typ V IN ESD-Zener diode: 67 V typ., max 15 mA; Overvoltage protection of logic part + Vbb Current sense output Normal operation R IN V Z,IN V Z,IS IN R bb Vbb Rbb IIS,fault ZD Logic V V OUT Z,IS IS PROFET R V IS IIS R IS R IS V Z,VIS V IS Signal GND VZ,IS = 67 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. Therefore RIS should be less than Rbb = 100 typ., VZ,IN = VZ,IS = 67 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 67 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Vbb - 5V . 7.5mA Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Infineon Technologies AG 9 of 16 2003-Oct-01 Data sheet BTS 6143 D Reversave (Reverse battery protection) - V bb R bb Vbb disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD<39 V if RIN = 0). For higher clamp voltages currents at IN and IS have to be limited to 120 mA. Version a: IN OUT R IN Logic Power Transistor V bb IN V bb OUT PROFET RL D Signal GND R IS Power GND IS VD V ZL RIS typ. 1 k. Add RIN for reverse battery protection in applications with Vbb above 16V; recommended value: 0.08 A 1 1 + = RIN RIS | Vbb | -12V To minimise power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 80mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS. Since the current via Rbb generates additional heat in the device, this has to be taken into account in the overall thermal consideration. Inverse load current operation Vbb V bb + IN - IL PROFET IS OUT - V OUT + IIS - V IN V IS R IS The device can be operated in inverse load current mode (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! Infineon Technologies AG 10 of 16 2003-Oct-01 Data sheet BTS 6143 D Short circuit detection Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC) (typ.650 s). Inductive load switch-off energy dissipation E bb E AS V ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL Overload detection Fault Condition: VON > 1 V typ. + V bb V bb VO N { OUT Logic unit detection circuit RIS ER Energy stored in load inductance: Short circuit Short circuit is a combination of primary and secondary impedance's and a resistance's. EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : 2 5uH IN 10mOhm V bb OUT L SC EAS= PROFET IL* L (V + |VOUT(CL)|) 2*RL bb ln (1+ |V IL*RL OUT(CL)| ) IS I R SC IN SC Z L Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 1000 V bb Allowable combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event: L [m H ] 100 [uH] 15 10 5 0 L SC V bb : 16V 24V 18V 30V 10 1 R SC 0 100 200 300 [mOhm] 0,1 0,01 1 10 I_L [A ] 100 Infineon Technologies AG 11 of 16 2003-Oct-01 Data sheet BTS 6143 D Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IIL IL tslc(IS) t slc(IS) IIS Load 1 Load 2 IIS,faut / I IS,lim t IIS tson(IS) t soff(IS) t As long as VbIS < VZ,IS the sense current will never exceed IIS,fault and/or IIS,lim. Figure 2b: Switching an inductive load: The sense signal is not valid during a settling time after turn-on/off and after change of load current. IIN VOUT VON(CL) IL IIS t Infineon Technologies AG 12 of 16 2003-Oct-01 Data sheet BTS 6143 D Figure 3a: Typ. current limitation characteristic [A] 100 I L(SC) Figure 3c: Short circuit type two: shut down by short circuit detection, reset by IIN = 0. IIN 80 IL Internal Switch off td(SC2) depending on the external impedance 60 VON 40 1V typ. 20 V ON 0V ON(SC) IIS IL k ilis 0 10 20 30 I IS,fault [V] t In case of VON > VON(SC) (typ. 4 V) the device will be switched off by internal short circuit detection. Figure 3b: Short circuit type one: shut down by short circuit detection, reset by IIN = 0. Shut down remains latched until next reset via input. Figure 4a: Overtemperature Reset if Tj IIN VON > VON(SC) IL(SC) IL IIS IIS,fault td(SC1) tm IIS I IS,fault VOUT Auto Restart tdelay(fault) t Shut down remains latched until next reset via input. Tj t Infineon Technologies AG 13 of 16 2003-Oct-01 Data sheet BTS 6143 D Figure 4b: Overload Tj IL Vbb -V OUT VON=1V typ. RON *I L,lim 3 2 I L,lim IS 1 t IL k ilis IIS,lim IIS,fault I IS(LH) 0 IL(MIN) 10 20 30 40 IL [A] Figure 5a: Undervoltage restart of charge pump, overvoltage clamp Figure 6b: Current sense ratio22: VOUT kILIS 20000 VIN = 0 15000 dynamic, short Undervoltage not below VbIN(u) V ON(CL) 10000 5000 [A] IL 0 5 10 20 IIN = 0 VON(CL) 0 0 VbIN(u) VbIN(ucp) 10 0 V12 bb 22 This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised by means of calibration the value of kILIS for every single device. Infineon Technologies AG 14 of 16 2003-Oct-01 Data sheet BTS 6143 D Figure 7a: Output voltage drop versus load current: [V] 0.1 VON R 0.05 V ON(NL) ON 0.0 0 1 2 3 4 5 6 IL 7 [A] 8 Infineon Technologies AG 15 of 16 2003-Oct-01 Data sheet BTS 6143 D Package and Ordering Code All dimensions in mm D-Pak-5 Pin: TO-252-5-1 Sales Code Ordering code 6.5 +0.15 -0.10 BTS6143D Q67060-S7411-A803 2.3 +0.05 -0.10 B A 1 0.1 0...0.15 0.9 +0.08 -0.04 10.1 5.4 0.1 9.9 0.5 6.22 -0.2 0.8 0.15 (4.17) 0.15 max per side 0.51 min 5x0.6 0.1 1.14 0.5 +0.08 -0.04 0.1 4.56 0.25 M AB GPT09161 All metal surfaces tin plated, except area of cut. Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG Page 16 of 16 2003-Oct-01 |
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